Go to JKU Homepage
54. J. Aberl, E. Prado Navarrete, M. Karaman, D. Haya Enriquez, C. Wilflingseder, A. Salomon, D. Primetzhofer, M. A. Schubert, G. Capellini, T. Fromherz, P. Deak, A. Gali, M. Brehm, All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy, opens an external URL in a new window, arXiv. 2024
53. A. Fuchsberger, L. Wind, D. Nazzari, L. Kühberger, D. Popp, J. Aberl, E. Prado Navarrete, M. Brehm, L. Vogl, P. Schweizer, S. Lellig, X. Maeder, M. Sistani, W. M. Weber, A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States, opens an external URL in a new window, IEEE Journal of the Electron Devices Society, 12, 83-87 (2024)
52. K. Martínez, A. Minenkov, J. Aberl, D. Buca, M. Brehm, H. Groiss, I, opens an external URL in a new windown situ TEM heating experiments on thin epitaxial GeSn layers: Modes of phase separation, opens an external URL in a new window, APL Materials 11, 101117 (2023).
51. T. Poempool, J. Aberl, M. Clementi, L. Spindlberger, L. Vukušić, M. Galli, D. Gerace, F. Fournel, J.-M. Hartmann, F. Schäffler, M. Brehm, T. Fromherz, Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator, opens an external URL in a new window, Optics Express 31 (10), 15564-15578 (2023).
50. A. Fuchsberger, L. Wind, M. Sistani, R. Behrle, D. Nazzari, J. Aberl, E. Prado Navarete, L. Vukŭsić, M. Brehm, P. Schweizer, L. Vogl, X. Maeder, W. M. Weber, Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts, opens an external URL in a new window, Advanced Electronic Materials, aelm 202201259 (2023)
49. L. Wind, M. Sistani, R. Böckle, J. Smoliner, L. Vukŭsić, J. Aberl, M. Brehm, P. Schweizer, X. Maeder, J. Michler, F. Fournel, J.‐M.Hartmann, W. M. Weber, Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts, , opens an external URL in a new windowSmall 18 (44), 2204178 (2022)
48. J. Aberl, L. Vukušić, F. Fournel, J. M. Hartmann, M. Brehm, Epitaxial Growth of Planar Hutwires on Silicon‐on‐Insulator Substrates, , opens an external URL in a new windowphysica status solidi (a) 219 (17), 2200145 (2022)
47. I. A. Fischer, M. Brehm, M. De Seta, G. Isella, D. J. Paul, M. Virgilio, G. Capellini, On-chip infrared photonics with Si-Ge-heterostructures: What is next?, , opens an external URL in a new windowAPL Photonics 7 (5), 050901 (2022)
46. A. Minenkov, N. Šantić, T. Truglas, J. Aberl, L. Vukušić, M. Brehm, H. Groiss, Advanced preparation of plan-view specimens on a MEMS chip for in situ TEM heating experiments, opens an external URL in a new window, MRS Bulletin, 1-12 (2022)
45. , opens an external URL in a new windowA. Salomon, J. Aberl, L. Vukušić, M Hauser, T Fromherz, M Brehm, Relaxation delay of Ge‐rich epitaxial SiGe films on Si (001), opens an external URL in a new window, physica status solidi (a) 219, 2200154 (2022)
44. M. Brehm, G. Springholz, Gettering and Defect Engineering in Semiconductor Technology (GADEST 2022), opens an external URL in a new window, Physica Status Solidi. A: Applications & Materials Science, 1-1 (2022)
43. J. Schuster, J. Aberl, L. Vukušić, L. Spindlberger, H. Groiss, T. Fromherz, M. Brehm, F. Schäffler, Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots, opens an external URL in a new window, Scientific reports 11 (1), 1-13 (2021)
42. F. Murphy-Armando, M. Brehm, P. Steindl, M. T. Lusk, T. Fromherz, K. Schwarz, P Blaha, Light emission from direct band gap germanium containing split-interstitial defects, , opens an external URL in a new windowPhysical Review B 103 (8), 085310 (2021)
41. M. Brehm, G. Springholz, Gettering and Defect Engineering in Semiconductor Technology (GADEST 2021), opens an external URL in a new window, Physica Status Solidi. A: Applications & Materials Science, 1-1 (2021)
40. L. Spindlberger*, M. Kim, J. Aberl, T. Fromherz, F. Schäffler, F. Fournel, J.-M. Hartmann, B. Hallam, M. Brehm, Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission, opens an external URL in a new window, Appl. Phys. Lett. 118, 083104 (2021).
39. M. Brehm, Light-emission from ion-implanted group-IV nanostructures, opens an external URL in a new window, Silicon Photonics IV, 67-103 (2021)
38. L. Spindlberger, J. Aberl, A. Polimeni, J. Schuster, J. Hörschläger, T. Truglas, H. Groiss, F. Schäffler, T. Fromherz, M. Brehm, In-situ annealing and hydrogen irradiation of defect-enhanced germanium quantum dot light sources on silicon, , opens an external URL in a new windowCrystals 10 (5), 351 (2020)
37. J. Aberl, M. Brehm, T. Fromherz, J. Schuster, J. Frigerio, P. Rauter, SiGe quantum well infrared photodetectors on strained-silicon-on-insulator, opens an external URL in a new window, Optics Express 27 (22), 32009-32018 (2019)
36. L. Spindlberger, S. Prucnal, J. Aberl, M. Brehm, Thermal Stability of Defect‐Enhanced Ge on Si Quantum Dot Luminescence upon Millisecond Flash Lamp Annealing, opens an external URL in a new window, physica status solidi (a) 216 (17), 1900307 (2019)
35. F. Hackl, M. Grydlik, P. Klenovsky, F. Schäffler, T. Fromherz, and M. Brehm*, Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots, opens an external URL in a new window, Ann. Phys. (Berlin), 1800259 (2019).
34. P. Rauter, L. Spindlberger, F. Schaeffler, T. Fromherz, J. Freund, and M. Brehm*, Room-temperature group-IV LED based on defect-enhanced Ge quantum dots, ACS Photonics 5 , 431–438 (2018).
33. H. Groiss, M. Glaser, M. Schatzl, M. Brehm, D. Gerthsen, D. Roth, P. Bauer, and F. Schäffler, Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1−xSnx epilayers, Scientific Reports 7, 16114 (2017).
32. M. Brehm* and M. Grydlik, Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications, Nanotechnology 28, 392001 (2017).
31. M. Schatzl, F. Hackl, M. Glaser, M. Brehm, P. Rauter, A. Simbula, M. Galli, T. Fromherz, and F. Schäffler, Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities, ACS Photonics, 4, 665 (2017).
30. H. Groiss, L. Spindlberger, P. Oberhumer, F. Schäffler, T. Fromherz, M. Grydlik, M. Brehm*, Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots, Semicond. Sci. Technol. 32, 02LT01 (2017).
29. M. Grydlik, M. T. Lusk, F. Hackl, A. Polimeni, T. Fromherz, W. Jantsch, F.Schäffler and M. Brehm*, Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si, Nano Lett. 16, 6802–6807 (2016).
28. M. Grydlik, F. Hackl, H. Groiss, M. Glaser, A. Halilovic, T. Fromherz, W. Jantsch, F. Schäffler and M. Brehm*, Lasing from glassy Ge quantum dots in crystalline Si, ACS Photonics 3, 298 (2016).
27. M. Brehm, H. Groiss, G. Bauer, Y. Paltiel, R. Clarke, Y. Yacoby, Atomic structure and composition distribution in wetting layers and islands of Germanium grown on Silicon (001) substrates, Nanotechnology 26, 485702 (2015).
26. M. Grydlik, M. Brehm*, T. Tayagaki, G. Langer, O.G. Schmidt and F. Schäffler, Optical properties of individual site-controlled Ge quantum dots epitaxially grown on patterned Si(001) substrate, Appl. Phys. Lett. 106, 251904 (2015).
25. M. Brehm, M. Grydlik, T. Tayagaki, G. Langer, F. Schäffler, and O.G. Schmidt, Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates, Nanotechnology 26, 225202 (2015).
24. J. Zhang, M. Brehm*, M. Grydlik, and O.G. Schmidt, Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers, Chem. Soc. Rev. 44, 26 (2015).
23. M. Brehm, M. Grydlik, F. Schäffler, O.G. Schmidt, Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(001), Microelectronic Engineering 125, 22–27 (2014).
22. M. Grydlik, M. Brehm, F. Hackl, F. Schäffler, G. Bauer, and T. Fromherz, Unrolling the evolution kinetics of ordered SiGe islands via Ge surface diffusion, Phys. Rev. B. 88, 115311 (2013).
21. M. Grydlik, G. Langer, T. Fromherz, F. Schäffler and M. Brehm*, Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates, Nanotechnology 24, 105601 (2013).
20. M. Grydlik, M. Brehm and F. Schäffler, Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits, Nanoscale Res. Lett. 7, 601 (2012).
19. P. Klenovský, M. Brehm, V. Křápek, E. Lausecker, D. Munzar, F. Hackl, H. Steiner, T. Fromherz, G. Bauer, J. Humlíček, Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition, Phys. Rev. B 86, 115305 (2012).
18. M. Grydlik, F. Boioli, H. Groiss, R. Gatti, M. Brehm, F. Montalenti, B. Devincre, F. Schäffler, L. Miglio, Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001), Appl. Phys. Lett. 101, 013119 (2012).
17. E. Lausecker, M. Grydlik, M. Brehm, I. Bergmair, M. Mühlberger, T. Fromherz, G. Bauer, Anisotropic remastering for reducing feature sizes on UV nanoimprint lithography replica molds, Nanotechnology 23, 165302 (2012).
16. G. Vastola, M. Grydlik, M. Brehm, F. Boioli, T. Fromherz, G. Bauer, F. Montalenti, L. Miglio, How pit facet inclination drives heteroepitaxial island positioning on patterned substrates, Phys. Rev. B 84, 155415 (2011).
15. R. Bergamaschini, M. Brehm, M. Grydlik, T. Fromherz, G. Bauer, F. Montalenti, Temperature-dependent consumption of the wetting layer following the appearance of stable islands in Ge/Si Stranski-Krastanow growth, Nanotechnology 22, 285704 (2011).
14. F. Boioli, R. Gatti, M. Grydlik, M. Brehm, F. Montalenti, L. Miglio, Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates, Appl. Phys. Lett. 99, 033106 (2011).
13. E. Lausecker, M. Brehm, M. Grydlik, F. Hackl, I. Bergmair, M.Mühlberger, T. Fromherz, F. Schäffler, G. Bauer, UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays, Appl. Phys. Lett. 98, 143101 (2011).
12. M. Brehm*, M. Grydlik, H. Groiss, F. Hackl, F. Schäffler, T. Fromherz, G. Bauer, The Influence of a Si Cap on Self-Organized SiGe Islands and the underlying Wetting Layer, J. Appl. Phys. 109, 123505 (2011).
11. M. Brehm*, H. Lichtenberger, T. Fromherz, G. Springholz, Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands, Nanoscale Res. Lett. 6, 70 (2011).
10. R. Gatti, F. Boioli, M. Grydlik, M. Brehm, H. Groiss, F. Montalenti, T. Fromherz, F. Schäffler, G. Bauer, L. Miglio, Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates, Appl. Phys. Lett. 98, 121908 (2011).
9. F. Hackl, M. Grydlik, M. Brehm, H. Groiss, F. Schäffler, T. Fromherz, G. Bauer, Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates, Nanotechnology 22, 165302 (2011).
8. M. Brehm*, M. Grydlik, F. Hackl, E. Lausecker, T. Fromherz, and G. Bauer, Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands, Nanoscale Res. Lett. 5, 1868 (2010).
7. M. Grydlik, M. Brehm, F. Hackl, H. Groiss, T. Fromherz, F. Schäffler and G. Bauer, Inverted Ge islands in {111} faceted Si pits — a novel approach towards SiGe islands with higher aspect ratio, New J. Phys. 12, 063002 (2010).
6. M. Brehm*, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio, and G. Bauer, Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset, Phys. Rev. B, 80 205321 (2009).
5. C. Wang, J. Roither, R. Kirchschlager, M. V. Kovalenko, M. Brehm, T. Fromherz, Q. Kan, P. Tan, J. Liu, H. Chen, and W. Heiss, Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals, Appl. Phys. Lett. 95, 053107 (2009).
4. M. Brehm, T. Suzuki, T. Fromherz, Z. Zhong, N. Hrauda, F. Hackl, J. Stangl, F. Schäffler and G. Bauer, Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations, New Journal of Physics 11, 063021 (2009).
3. M. Brehm*, H. Lichtenberger, M. Grydlik, T. Fromherz, W. Jantsch, F. Schäffler, and G. Bauer, Quantitative determination of Ge profiles across SiGe wetting layers on Si (001), Appl. Phys. Lett. 93, 121901 (2008).
2. M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, G. Bauer, Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration, Microelectronics Journal 39, 485 (2008).
1. B. Mandl, J. Stangl, T. Martensson, M. Brehm, T. Fromherz, G. Bauer, L. Samuelson, W. Seifert, Metal free growth and characterization of InAs1-xPx nanowires, Physics of Semiconductors, Pts A and B 893, 97 (2007).
