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Institute of Semiconductor and Solid State Physics
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Dr. Ievgen Brytavskyi

Senior Scientist, ÖAW Scholarship Holder

Education

2010 - 2014 PhD, Odessa I. I. Mechnikov National University, Odessa, Ukraine
2008 - 2009 M.Sc., Odessa I. I. Mechnikov National University, Odessa, Ukraine
2004 - 2008 B.Sc., Odessa I. I. Mechnikov National University, Odessa, Ukraine

Professional Experience

2017-2020 PhD Researcher, Interdepartmental  Physic-technical Center of Odessa I. I. Mechnikov National University
2019 DAAD Research Internship, Paul-Drude-Institute, Berlin, Germany
10-11 / 2018 Invited Researcher, Prof. D.S. Kim Nano-optics Lab of Seoul National University, Seoul, Republic of Korea
2016-2017 Postdoctoral Researcher, Institute of Electrical Engineering, Slovak Academy of Science, Bratislava, Slovakia
2013-2015 Graduate Researcher, Department of Experimental Physics, Odessa I. I. Mechnikov National University
2011-2012 Erasmus Mundus PhD Internship, Semiconductor Physics Department of Vilnius University, Vilnius, Lithuania

Scholarships and Projects

05 / 2018 Erasmus+ KA107 Scholarship, short-term research visit to Laboratory of Industrial Physics, Turku University, Finland
2017-2018 Head of Young researchers project,  Ministry of Science and Education of  Ukraine
2016 - 2018 Scholarship of Ministry of Science and Education of Ukraine for young researchers
03-05 / 2013 The National Scholarship Program of Ministry of Education and Science, Research and Sport of the Slovak Republic
09/2011 - 06/2012 Erasmus Mundus Scholarship for PhD students, Action 2 LOT 7 BMU

Scientific Interests

  • surface and interfacial phenomena in semiconductors
  • thin film semiconductor devices
  • physical characterization of nanostructures
  • heterostructure sensors
  • nanofabrication
  • photonics

Main Publications

Brytavskyi I., Hušeková K., Myndrul V., Pavlenko M., Coy E., Zaleski K., Gregušová D., Yate L., Smyntyna V., Iatsunskyi I., Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers / Applied Surface Science, 2019, Vol. 471, pages 686-693.

Stoklas R., Gregušová D., Hasenöhrl S., Brytavskyi E., M. Ťapajna, Fröhlich K.,  Haščík Š., Gregor M.,  Kuzmík J., Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2gate dielectric grown by atomic layer deposition / Applied Surface Science, 2018, Vol. 461, pages 255–259.

Nonideal Heterojunctions for Image Sensors, Valentin Smyntyna, Vitaliy Borschak and Ievgen Brytavskyi, Monography, NOVA Publishers, New York, USA, ISBN: 978-1-53614-515-1, 2018

Kúdela R., Šoltýs J., Kučera M., Stoklas R., Gucmann F., Blaho M., Mičušík M., Pohorelec O., Gregor M., Brytavskyi I., Dobročka E., Gregušová D., Technology and application of in-situ AlOx layers on III-V semiconductors / Applied Surface Science, 2018, Vol. 461, pages 33–38.

Gaubas E., Brytavskyi I., Ceponis T., Jasiunas A., Kalesinskas V., Kovalevskij V., Meskauskaite D., Pavlov J., Remeikis V., Tamulaitis G., Tekorius A. In situ variations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS / Journal of Applied Physics, 115, 243507 (2014).

Gaubas E., Brytavskyi I., Čeponis T., Kusakovskij J., and Tamulaitis G. Barrier Capacitance Characteristics of CdS-Cu2S Junction Structures / Thin Solid Films, Volume 531, 15 March 2013, Pages 131–136.

Gaubas E., Borschak V., Brytavskyi I., Čeponis T., Dobrovolskas D., Juršėnas S., Kusakovskij J., Smyntyna V., Tamulaitis G. and Tekorius A. Nonradiative and Radiative Recombination in CdS Polycrystalline Structures / Advances in Condensed Matter Physics, Volume 2013 (2013), Article ID 917543, 15 pages.

Eugenijus Gaubas, Ievgen Brytavskyi, Tomas Ceponis, Vidmantas Kalendra and Audrius Tekorius. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures / Materials, 5(12), 2012, pages 2597–2608.