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Institute of Semiconductor and Solid State Physics
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Dr. Mahdi Hajlaoui.

Curriculum Vitae

University degrees

Ph.D. in Physics (2010 – 2013 | University of Paris Saclay, France)
Supervisor: Prof. Dr. Marino Marsi at LPS laboratory in Orsay
Topic: "Between Metal and Insulator: Ultrafast Dynamics in the 3D Topological Insulator Bi2Te3 and Microscopic Domains at the Mott Transition in V2O3"

Master of Research (2009 – 2010 | University of Paris Saclay, France)
Field of Study: Condensed Matter Physics

Master's in Physics (2007 – 2009 | Normal School of Tunis, Tunisia)
Field of Study: Fundamental Physics

Undergraduate's Degree (2005 – 2007 | Carthage University: Faculty of Sciences of Bizerte, Tunisia)
Field of Study: Physical sciences
 

Postdoctoral positions

Postdoctoral Researcher (Aug. 2020 – Present | Johannes Kepler University Linz, Austria)
Group of Prof. Dr. Gunther Springholz
Main topic: “Investigations of Topological and Magnetic Semiconductors via Density Functional Calculations, Molecular Beam Epitaxy, and ARPES”

Postdoctoral Researcher (Sept.2018 – July.2020 | Technical University of Dortmund, Germany)
Supervisor: Prof. Dr. Mirko Cinchetti
Main topic: ARPES investigations of semiconductor quantum wells and antiferromagnetic materials.

Postdoctoral Researcher (Nov. 2013 – Oct. 2015 | Synchrotron SOLEIL/C2N Laboratory, France)
Supervisor: Dr. Rachid Belkhou and Dr. Abdelkarim Ouerghi
Topic: PEEM, ARPES and NEXAFS studies of epitaxial graphene multilayers on SiC substrates


Faculty positions

Assistant Professor in Physics (2015-2018 | University of Carthage, Tunisia)
Teaching Physics and research activities

Part-Time Lecturer (2014-2015 | Paris Descartes University, France)
Teaching Physics and Mathematics6

Key Publications

  1. G. Krizman, T. Zakusylo, L. Sajeev, M. Hajlaoui, T. Takashiro, M. Rosmus, N. Olszowska, J. J. Kołodziej, G. Bauer, O. Caha, and others, “A novel ferroelectric Rashba semiconductor,” Adv. Mater., vol. 36, no. 13, p. 2310278, 2024.
     
  2. G. Krizman, J. Bermejo-Ortiz, T. Zakusylo, M. Hajlaoui, T. Takashiro, M. Rosmus, N. Olszowska, J. J. Kołodziej, G. Bauer, Y. Guldner, and others, “Valley-polarized quantum Hall phase in a strain-controlled Dirac system,” Phys. Rev. Lett., vol. 132, no. 16, p. 166601, 2024.
     
  3. M. Hajlaoui, S. Wilfred D’Souza, L. Šmejkal, D. Kriegner, G. Krizman, T. Zakusylo, N. Olszowska, O. Caha, J. Michalička, J. Sánchez-Barriga, A. Marmodoro, K. Výborný, A. Ernst, M. Cinchetti, J. Minar, T. Jungwirth, and G. Springholz, “Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition,” Adv. Mater., vol. 36, no. 31, p. 2314076, 2024.
     
  4. J. Krempasky, L. Šmejkal, S. W. D’Souza, M. Hajlaoui, G. Springholz, K. K. Uhlířová, F. Alarab, P. C. Constantinou, V. Strocov, D. Usanov, and others, “Altermagnetic lifting of Kramers spin degeneracy,” Nature, vol. 626, no. 7999, pp. 517–522, 2024.
     
  5. J. Bermejo-Ortiz, G. Krizman, R. Jakiela, Z. Khosravizadeh, M. Hajlaoui, G. Bauer, G. Springholz, L.-A. de Vaulchier, and Y. Guldner, “Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions,” Phys. Rev. B, vol. 107, no. 7, p. 75129, 2023.
     
  6. F. Chassot, A. Pulkkinen, G. Kremer, T. Zakusylo, G. Krizman, M. Hajlaoui, J. H. Dil, J. Krempasky, J. Minár, G. Springholz, and others, “Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature,” Nano Lett., vol. 24, no. 1, pp. 82–88, 2023.
     
  7. M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D. J. As, D. Reuter, T. Zentgraf, G. Springholz, C. M. Schneider, S. Cramm, and others, “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Sci. Rep., vol. 11, no. 1, p. 19081, 2021.
     
  8. M. Hajlaoui, H. Sediri, D. Pierucci, H. Henck, T. Phuphachong, M. G. Silly, L.-A. De Vaulchier, F. Sirotti, Y. Guldner, R. Belkhou, and others, “High electron mobility in epitaxial trilayer graphene on off-axis SiC (0001),” Sci. Rep., vol. 6, no. 1, p. 18791, 2016.
     
  9. G. Lantz, M. Hajlaoui, E. Papalazarou, V. L. R. Jacques, A. Mazzotti, M. Marsi, S. Lupi, M. Amati, L. Gregoratti, L. Si, and others, “Surface effects on the Mott-Hubbard transition in archetypal V2O3,” Phys. Rev. Lett., vol. 115, no. 23, p. 236802, 2015.
     
  10. R. Belkhou, S. Stanescu, S. Swaraj, A. Besson, M. Ledoux, M. Hajlaoui, and D. Dalle, “HERMES: a soft X-ray beamline dedicated to X-ray microscopy,” J. Synchrotron Radiat., vol. 22, no. 4, pp. 968–979, 2015.
     
  11. H. Sediri, D. Pierucci, M. Hajlaoui, H. Henck, G. Patriarche, Y. J. Dappe, S. Yuan, B. Toury, R. Belkhou, M. G. Silly, and others, “Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure,” Sci. Rep., vol. 5, no. 1, p. 16465, 2015.
     
  12. M. Hajlaoui, E. Papalazarou, J. Mauchain, L. Perfetti, A. Taleb-Ibrahimi, F. Navarin, M. Monteverde, P. Auban-Senzier, C. R. Pasquier, N. Moisan, and others, “Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry,” Nat. Commun., vol. 5, no. 1, p. 3003, 2014.
     
  13. M. Hajlaoui, E. Papalazarou, J. Mauchain, Z. Jiang, I. Miotkowski, Y. P. Chen, A. Taleb-Ibrahimi, L. Perfetti, and M. Marsi, “Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2Te3,” Eur. Phys. J. Spec. Top., vol. 222, pp. 1271–1275, 2013.
     
  14. M. Hajlaoui, E. Papalazarou, J. Mauchain, G. Lantz, N. Moisan, D. Boschetto, Z. Jiang, I.  Miotkowski, Y. P. Chen, A. Taleb-Ibrahimi, and others, “Ultrafast surface carrier dynamics in the topological insulator Bi2Te3,” Nano Lett., vol. 12, no. 7, pp. 3532–3536, 2012.